德州仪器新闻稿，1961年1至4月

3B, 3C, 3E, Distribution: lA, 5A, 5B, 5C, 5D, .5E, 6C, and Black Dot List. Journal Wall Street OFFICES GENERAL News Morning Dallas BuILDING RESEARCH CENTRAL EXPRESSWAY CENTRAL NORTH 13500 Times Herald Dallas

Doni Maciv er Publi c Relation s Manager Central Market i ng Don Maciver I N

R P

O

C

I

'--t/

U M E NTS

INSTR

TEXAS

R A T

O

E D

I

TO EXCHANGE

NON-EXCLUSIVE

AND TECHNICAL

INFORMATION

ON SEMICONDUCTOR

January

Telephone

and

today

Corporation

Telegraph

non-exclusive

patent

licenses

and technical

components.

Texas

Instruments

will

semiconductor

devices

It was

relationship

markets.

11

P.

"Our

source

of high

quality

ITT has including research,

engineering,

"This

observed

technical

to the latest

as access

of ITT,

President

S. Geneen,

activities

and industrial

advanced

for

know-how,

and technical

and laboratory

It carries

on international

units

in twenty

business as well

and operations,

ADDRESS

: POST

OFFICE

BOX

1079

DALLAS

, TEXAS

ADAMS

including

11

systems.

plants

an assured

requires

in Europe,

components

said

countries

in communications,

as development

(more)

MAILING

in

for our plant

and especially

telecommunications

consumer

manufacture

electronics

11

semiconductor

States.

the growing

Instruments,

in world-wide

manufacturing

the United

for

and progressive

as "A sound

of Texas

H.

of key components

the development

needs

of ITT's

a portion

better

development.

as our

as well

electronics,

semiconductor

as well

in France

expansion

continuing

concerning

business

the agreement,

Discussing

information

to serve

us with important

of systems

requirements

them

President

E. Haggerty,

and our new plant

England

to exchange

by both parties

to enable

provides

agreement

an agreement

and components.

characterized

business

and International

announced

supply

also

COMPONENTS

Incorporated

Instruments

• Texas

18 - (Special)

LICENSES

PATENT

TI AND ITT AGREE

DALLAS,

RELEASE

IMMEDIATE

FOR

NEWS RELEASE

5 - 311

1

CABLE

: TEXINS

and

'.

Page two TI and ITT

agreement

Texas

and service States,

Instruments devices

semiconductor

activities.

and manufactures

England,

with

at Nice,

France.

a third

projects.

and space-system

of missile

management

is one of the world's

and components

It has plants

and engages in eight

semiconductor plant

semiconductor

-30-

foremost

countries

in other

producers

of

manufacturing

including

devices

at Dallas,

Texas,

soon

to be brought

into

the United and Bedford, production

Don ..;:;.civer Public Relations ~anager Central ~arketing

GSI INFORMATION Service Geophysical Bank 900 Exchange Dallas 35, Texas 7 -4311 FLeetwood Robert F. Alexander

release For immediate 26, 1961 January

SER VICE Inc. Building

Hemisphere

has

been

announced

by R. C. Dunlap, subsidiary

Inc. , the exploration

Service

Jr.

as Jr.

C. M. Moore,

Vice-President

to Eastern

assistant

of R. H. Rainey

• The appointment

Texas.

DALLAS,

STAFF

HEMISPHERE

GSI ADDS TO EASTERN

of Geophysical

, President of Texas

Instruments

Incorporated.

of his

and a half years

and later

supervisor

operations

gravity

he has

experience, and West held

that

Dunlap will maintain Middle

East

manager in the Far also

worked

at the time

fourteen

Four

years.

was gained

as a

of GSI reflection,

refraction

and

In addition

to his Far

East

experience

geophysical

Rainey

Texas. post

with GSI for the past

has been

Rainey

East.

as a seismic

supervisor

in Canada

marketing

manager

in 1959 and

was made

of his new appointment. continue

to headquarter

said

Rainey

will

close

liaison

with GSI operations

and Africa.

###

in Dallas

in the Far

East,

but

, C. TEXAS

POST OFFICE ADAMS 5 - 3111

INSTRUMENTS

Clough BOX

312

•

DALLAS 21, TEXAS CABLE , TEXINS

INCORPORATED

SEMICONDUCTOR-COMPONENTS

NEW PRODUCT

FIRST

PRODUCTION

ANNOUNCED

BY TEXAS

New Devices

Fastest

Texas,

in the history

of silicon

transistors silicon

are

process.

at least

twice

are

significant

known

today

TRANSISTORS

the first

made

mass

techniques.

of epitaxial

construction,

development

by Texas

transistors

by epitaxial

as fast

1961

in Industry

most

switching These

3,

INCORPORATED

Transistors

made

FEB.

Instruments

by the

produced

these

silicon

newest

TI

as any other

commercially

available

TI 2N743 with

a conventional

silicon

circuitry,

the TI epitaxial

devices

levels

of 10 milliamperes

transistors.

Comparing ing transistor

was

of two ultra-fast

full utilization

switching

switch

i stors

to be manufactured

By making

Silicon

RELEASE

EPITAXIAL

INSTRUMENTS

3--(Special)--The

trans

manufacturing

transistors

OF SILICON

Switching

February

with the introduction epitaxial

FOR

RELEASE

COMMERCIAL

DALLAS,

DIVISION

the new epitaxial (2N706)

in one-half

in equivalent

the time

at current switching

the time

at 100 ma.

Typical

saturated

circuit

26 nanoseconds

seconds

at 100 ma.

are

at 10 ma and 29 nsec

The

2N744

characteristics total

highlights

at 100 ma.

(more)

switching typical

total

will

and one-quarter

of the TI 2N743 time

switch­

in a

at 10 ma and 24 nano-

switching

times

of 2 7 nsec

page first

2 commercial

production

Maximum

switching

packaged

epitaxial

of silicon

epitaxial

transistor

times

in saturated

circuitry

for these

transistors

are:

at 10 ma

TI 2N743 16 nsec 24 II

newest

T0-18

TI 2N744 16 nsec 24 II

max II

max II

at 100 ma 12

II

II

40

II

II

14

II

II

Storage time constant

Another

significant

saturation

resistance

conventional

planar,

have

a saturation

epitaxial

types

In contrast

tance

mesa,

micro

alloy

resistance

that

is quite

almost

2. 2 volts

which

at 25°C remains

new epitaxial

temperature Res

change

exhibits

a constant

1 volt

feature

and a typical

This

combination

of ultra-fast

switching

capacitance,

and high

in current

ranges

the TI 2N743 from

(more)

II

II

II

series

is that

whereas type

transistors

dependent.

Both

from

a typical

at l 70°C,

at 5 volts

for application

II

to temperature,

of 3. 5 picofarads

fT makes

II

new epitaxial

to 4 volts

transistors

II

or grown-junction

negligible

to a 2N706 transistor

both

of this insensitive

of the TI 2N743

addition,

18

is practically

exhibit

at 100 ma from voltage

characteristic

12 45

• 1 75°C.

-65 to rise

in V CE(sat)

the maximum

from

-55 to

extremely

saturation

• 1 70°C.

low typical

In capaci-

fT of 400 megacycles. speeds,

stable

and TI 2N744

1 to 100 ma with

RCS'

ideal

a maximum

very

low

transistors allowable

page first

3 commercial

continuous makes

production

collector

these

required

current

new devices

a larger

at 100 ma, 24 nsec

has

conventional

which

added

three

for

circuitry

that

type

and 29 nsec

and

ICEX

l00°C

transistor time for

transistors,

this cost

100 ma for

Briefly,

these

to perform

switching

of these

two transistors

ratio,

The

at 10 minimum

all practical

= 10 volts,

new TI transistors Previously,

additional

is also

TI 2N744

logic

d-c

1 and

design

stages

at

highlights

an hFE

to 120 maximum for

in

at 10 ma.

100 ma and

parameters

are

20 min. guaranteed

• 25 and + l 70°C.

two new TI silicon

epitaxial

functions.

Every

consideration

an ideal

silicon

to build

its production

Instruments

has

manufactured

the rest

of the

than

at V CE

guaranteed

To prove

transistors

to a typical

source.

required

100 ma and a 40 minimum

-55,

compared

hFE'

transistors.

at 10 and

which,

systems.

for both

Also,

2Nl252

of computing

levels

specified

previously

and complexity

different

at 10 ma.

of these

function

transfer

has hFE

currents

the TI 2N744.

an IB 2 turn-off

current

TI 2N743

as the

of 72 nsec

usage

forward

of 20 at 1 and

such

of 30 microamperes

permits

requiring

to the overall

suited

switching

without

to 60 max.

Texas

well

The d-c

minimum The

at high

TI 2N743

circuitry

using

low RCS

especially

maximum

transistor

The

total

= + O. 35 volts,

epitaxial

of 200 ma.

a typical

for the

NOR logic

rating

medium-power

A guaranteed VBE

of silicon

ability

prior

was

are given

switching

to this

and delivered

semiconductor

(more)

transistors

in the design

device.

commercial to date

industry

optimized

announcement, more

combined.

silicon

epitaxial

In anticipation

page first

4 commerical

of heavy

demand

distributor delivery

production

and customer

across prior

of silicon

epitaxial

transistor

requirements,

the country

was

well

every

Texas

Instruments

stocked

in order

to provide

immediate

experience

already

realized

and TI mechanization

new

epitaxial

to announcement.

Because

of production

equipment

now in use,

competitively

with

these

conventional

silicon silicon

mesa

transistors

and micro

are

alloy

priced

switching

transistors. TI' s silicon the development

materials

manufacturing

and production

of these

and liaison

with

personnel.

This

effort,

from

raw

controlled

centralized

activity

which

provides

epitaxial

program.

to the

success

of the

silicon

contributed

heavily

by close

control,

new transistors

cooperation,

entire

Tl's

operations

silicon

transistor material

engineering to finished

immediate

to

and production product,

is a

feed-back

of data

vital

collector

characteristics

-30-

NOTE

TO EDITOR

of the

TI 2N743

2N706

conventional

complete

Texas

specifications

A 5 x 7 glossy

print

Instruments

epitaxial

silicon

transistor

comparing silicon

is enclosed

on the new epitaxial

the

transistor for your

transistors

with

those

use.

A data

is also

attached.

of the sheet

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j

Distribution:

3B, 3C, 3E, SA, SB, SC, SD, SE, 6C & Black Dot

Don Maciver

TEXAS

INSTRUMENTS

TEXAS

RELEASE

FOR

INSTRUMENTS

INTRODUCES

IT CONSIDERS

THE

DALLAS,

F e bru ary

3 - (Special)

today

commercial

availability

the

manufactured advanced

MOST

silicon

switching

of a second

manufactured

for

transistors

application them

general

While

the new

to be classified

the

ever

devices than

They plans

devices

TI already

is in mass

as any other

general

purpose

of the two devices

for

immediate

deliveries.

The

new transistors

mechanized

manufacturing

developed and

in the

(3) by Tl's

permits

transistors.

and testing

company's

in anticipation

from

experience

production

of its

own basic

control

of device

production

precise

are

priced

This

was

the

company

processes,

long

of heavy

silicon

1

of usage

permits

transistors.

and has

stocked

customer

demand with

possible,

TI said,

s extensive

(2) by advanced

usage

semiconductor

of

techniques

in silicon

in all process

months.

immediate

competitively

made

as the pioneer

transistors

epitaxial

greatest

as small-signal production

resulting

their

silicon

in coming

range

country

economies

to the markets

quantities. function

of new

potential

the

( 1) by production

of a family

their

throughout

switching

switching

as fast

distributors

silicon

in production

twice

to find

the most

sale their

expected

transistors

them

perform

TI said

also

for

AVAILABLE

announced

switching

it considers

offered

its

conventional

Incorporated

said

the first

TRANSISTORS MADE

will

are

are

EVER

silicon

to introduce

computers, and used

and

RELEASE

SILICON

DEVICES

Instruments

process

sale.

Instruments

EPITAXIAL

of two ultra-fast

or more

Texas

in electronic

• Texas

transistors that

IMMEDIATE

SWITCHING

epitaxial

TI announced in 24 billionths

TWO NEW

ADVANCED

by the new

transistors,

material

which

steps

from

raw

1

CABLE

TEXI NS

(more) MAILING

ADDRESS

: POST

OFFICE

lq& t]

GENERAL OFFICES CENTRAL RESEARCH BUILDING 13500 NORTH CENTRAL EXPRESSWAY

INCORPORATED

NEWS

[

BOX

1079

DALLAS

, TEXAS

ADAMS

5-311

Page two two new TI introduces transistors silicon epitaxial

product.

to finished

material

of low-resistivity

material

within

the material. of this

By means these

three

layers

upper

with

ease

of fabrication.

characteristics

are

virtually

to devices

of conventional

mechanism

performance minus

65°

for

Centigrade

function 175°

only

serving the

saturation in temperature

Resulting

advantages capability

layer

a substrate

of two more

is confined

thin

to

or handling

as the platform

to changes

Centigrade.

thin

upon

function

transistor

and operating

-30-

method

by diffusion

As a result,

construction.

to plus

material

substrate

insensitive

of the transistor

semiconductor

the actual

process the

of an extremely

addition

and the

consists

process

deposition

by vapor

single-crystal

of high-resistivity

or zone

layers

growth

controlled

carefully

of the

epitaxial

the

construction,

device

In semiconductor

resistance in contrast are

extremely

within

a range

fast of

Sue Moore TEXAS

6000

INSTRUMENTS

LEMMON

FLEETWOOD

AVENUE,

7-5411,

DALLAS

P. 0 . BOX

7045,

9,

TEXAS

CABLE,

TEX1NS

INCORPORATED

APPARATUS

DIVISION

NEWS RELEASE

FOR IMMEDIATE RELEASE

SOLID-STATE MICROWAVESOURCES AND HARMONICGENERATORS ARE AVAILABLE FROM TEXAS INSTRUMENTS

DALLAS, February has

announced

microwave formed

6--(Special)--Texas availability

sources

Radar

division.

reliable,

and microwave

stable

frequency used as

to

high

available power

r-f

parametric

from

Department

other

frequency

can

be

source

such

amplifiers

telemetry

as

than

sources

a fixed-frequency, for

Products

solid-state its

recently

in

the

company's

are

smaller,

lighter,

more

means

of

generating

low-

any

application

requiring

oscillators,

pump

signals.

Solid-state

sources

generators

The new devices

more

Incorporated

custom-engineered,

and harmonic

and Microwave

Apparatus

power

of

Instruments

in

as or

transmitters. multiply

used

local as

power

Harmonic

existing

r-f

sources

for

higher

can

be

generators

sources

to

frequencies

K-band.

The modular

constructed,

from

any

frequency

from

30 me to

10 kmc with

4 watts

at

lower

frequency

to

outputs

TI at '

from

crystal-controlled

the more

sources

are

5 mw at

Devices

2--Microwave

in any specified

is available

at up to 10,400 suitable

high

as 3 kmc can be provided

at

than

less

5 mw output important,

is

as

frequencies

at

with

available

at output

input

1 watt

only

to operate

28 vdc.

One unit,

20 Ge.

are

generators

Harmonic to

2000 and

provides

service

oscillator

local

for

units

between

power

Where minimum input

kmc.

Model

and measures

Model X-102,

unit,

Another

inches.

35 cubic

28 vdc.

at

frequency

20 ounces,

approximately

2800 me, weighs

up to

power outputs

achieves

power of 11 watts

maximum input

100 mw with S-102

Model S-102,

One example,

10 kmc.

element

The non-linear reactance

(varactor)

diode

division

of Texas

Instruments.

now can be obtained

possible

TI also

announced

schedules

short-time

that

configurations.

combinations

with

power output

requirements,

units

produced

in the

at higher

frequencies

outputs,

more

through

or

conditions special

higher

outside

on

units

special

impedances,

or frequencies be achieved

than

future.

environmental

Different

multiple-frequency

can also

this

near

indi­

diode

work with

can develop

it

the variable

is

Semiconductor-Components

by the

Recent

particular

for

minimum space

standard

a 50 to 100 mw

new devices

in these

power outputs

even greater

that

cates

17 Ge when used with

8500 me.

at

power source

5 to 10 mw of local

Model FM-029, provides

or AFC power at

oscillator

up

frequencies

or lower

the

modifications

of

range of

Devices

3--Microwave

to

frequencies More

changed

be

Other

obtained

by

non-military

bench

and

amplifiers.

Rotary

joints,

ferrite

preamplifiers,

and

microwave

switching

use

in both

mili­

and

acces­ of

operation

field

convenient

from

available

components

all

and

environments,

DLA-1218.

for

for

necessary

and harmonic

accessories

amplifiers

and

blocks.

No.

parametric

tary

multiplier sources

and

broadband

units,

Bulletin

from

or

"stack-on"

by exchanging

components

include

parametric

added

microwave

TI

sories

be

on solid-state

information may be

generators

i-f

to

new frequencies

permits

construction

modular

the

of

Flexibility

TI designs.

standard

the

mixers,

devices, devices

are

also

available.

--30--

NOTE TO EDITOR

solid-state

sources

A 5 x 7 glossy is

attached

photo for

showing your

use.

models

of

Tl's

.......

Distribution:

6C, Black News-Herald

Dot List & County

Oct01J papers

Don Maciver

TEXAS

INSTRUMENTS

I N C O

NEWS

RELEASE

SIXTY

FIVE

R P O

Dallas

R A T E D

FOR

OUTSTANDING

TO PARTICIPATE DALLAS,

high

9

by Texas

building

at 13500 North

interest

said

F.

Dr.

STUDENTS

SEMINAR

(Special)

-- Sixty

OF DALLAS

five

outstanding

in its

RELEASE

AREA

AT TEXAS

in a Science

Incorporated

Central

IMMEDIATE

SATURDAY

will participate

Instruments

seminar

stimulate

--

schools

Saturday

The

SCIENCE

IN SCIENCE

February

area

GENERAL OFFICES CENTRAL RESEARCH BUILDING 13500 NORTH CENTRAL EXPRESSWAY

HIGH SCHOOLS

INSTRUMENTS

science

Seminar

Central

students

of

to be conducted

next

Research

Laboratories

Day and to

Expressway. to observe

National

Youth

Science

of students

and the public

in science

and

engineering

education,

Brasted,

Administrative

Director

of the TI Central

Research

Kenneth

is planned

Laboratories. Half scientists,

a day will be spent

by the

1

s research

touring

the company

students

in questioning

facilities,

Texas

and lunching

Instruments

in a company

cafeteria. The program President

in charge

Assistant

Vice

will

start

of Research

President

the various

TI scientists

chemistry,

chemical

at 9: 30 a. m.

with talks

and Engineering,

and Director subjects

engineering,

and Dr.

of Research.

of their

particular

electrical

by R.

W. Olson,

Gordon

K.

TI Vice

Teal,

TI

Students

will

discuss

interest,

such

as physics,

ceramics

engineering,

engineering,

with

and mathematics. Students private, are

were

and parochial

represented

selected high

in advance

to take

schools

part

in the seminar

of the Dallas

registrations

for

area.

by faculty

More

the seminar,

than

Dr.

members

25 high

Brasted

schools

said.

-30MAILING

ADDRESS

POST

OFFICE

BOX

1079

DALLAS,

TEXAS

ADAMS

5-3111

CABLE

TEXINS

of public

TO EDITOR OF GARLAND

NOTE

Three

senior

students

Science

Seminar

next Saturday.

Virginia

Davis,

110 East

Mrs. of Mr.

Raymond and Mrs.

Moore,

NEWS: High School will attend

of Garland

Chico,

They are Gary Davis, Garland;

609 Oak Street,

E. Q. Rushing,

Jr.,

Robert Garland;

the TI

son of Mrs. son of Mr.

and

and Steve Rushing,

son

Moore,

3209 Medina,

Garland.

.

Ne w Morning Heralc Times

Dallas Dallas

Distribution: r

[

achools

yesterday

electricity

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